DMN3150LW Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN3150LW
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Low On-Resistance:
R_DS(ON) < 88mΩ @ V_GS = 4.5V
R_DS(ON) < 138mΩ @ V_GS = 2.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
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SOT-323
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish - Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.006 grams (approximate)
Drain
D
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Drain Current (Note 1)
Body-Diode Continuous Current (Note 1)
T_A = 25°C
T_A = 70°C
Pulsed
Gate
Source
EQUIVALENT CIRCUIT
Symbol
V_DSS
V_GSS
I_D
I_DM
I_S
G
S
Pin Configuration
Value
28
±12
1.6
1.2
6.4
1.5
Unit
V
V
A
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @T_A = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
350
357
-55 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol Min
Typ
Max
Unit
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
BV_DSS
28
⎯
⎯
V
Zero Gate Voltage Drain Current
I_DSS
⎯
⎯
800
nA
Gate-Body Leakage
I_GSS
⎯
⎯
±80
±800
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
V_GS(th)
0.62
0.94
1.4
V
Static Drain-Source On-Resistance
R_DS(ON)
⎯
⎯
73
115
88
138
mΩ
Forward Transconductance
|Y_fs|
⎯
5.4
⎯
S
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
V_SD
⎯
⎯
1.16
V
Input Capacitance
C_iss
⎯
305
⎯
pF
Output Capacitance
C_oss
⎯
74
⎯
pF
Reverse Transfer Capacitance
C_rss
⎯
48
⎯
pF
Notes:
1. Device mounted on 1in² FR-4 PCB on 2oz. Copper. t ≤ 10 sec.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
Test Condition
V_GS = 0V, I_D = 250μA
V_DS = 28V, V_GS = 0V
V_GS = ±12V, V_DS = 0V
V_GS = ±19V, V_DS = 0V
V_DS = V_GS, I_D = 250μA
V_GS = 4.5V, I_D = 1.6A
V_GS = 2.5V, I_D = 1.2A
V_DS = 5V, I_D = 2.7A
V_GS = 0V, I_S = 1.5A
V_DS = 5V, V_GS = 0V
f = 1.0MHz
DMN3150LW
Document number: DS31514 Rev. 1 - 2
1 of 4
www.diodes.com
August 2008
© Diodes Incorporated