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DMN3150L Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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DMN3150L
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
⢠Low On-Resistance:
RDS(ON) < 54m⦠@ VGS = 10V
RDS(ON) < 72m⦠@ VGS = 4.5V
RDS(ON) < 115m⦠@ VGS = 2.5V
⢠Low Gate Threshold Voltage
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Lead Free By Design/RoHS Compliant (Note 2)
⢠"Green" Device (Note 3)
⢠Qualified to AEC-Q101 Standards for High Reliability
⢠Case: SOT-23
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminals: Finish â Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
⢠Terminal Connections: See Diagram
⢠Marking Information: See Page 4
⢠Ordering Information: See Page 4
⢠Weight: 0.008 grams (approximate)
SOT-23
TOP VIEW
Drain
Gate
Source
EQUIVALENT CIRCUIT
D
G
S
Pin Configuration
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
±12
V
Drain Current (Note 1)
TA = 25°C
TA = 70°C
ID
3.8
3.1
A
Drain Current (Note 1)
Pulsed
IDM
15
A
Body-Diode Continuous Current (Note 1)
IS
2.0
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 1)
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
1.4
90
-55 to +150
Unit
W
°C/W
°C
DMN3150L
Document number: DS31126 Rev. 8 - 2
1 of 5
www.diodes.com
August 2009
© Diodes Incorporated
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