DMN313DLT Datasheet, PDF (1/5 Pages) Diodes Incorporated – Low On-Resistance

DMN313DLT
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V_(BR)DSS
30V
R_DS(ON)
2Ω @ V_GS = 4V
3.2Ω @ V_GS = 2.5V
I_D
T_A = 25°C
270mA
210mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Backlighting
• DC-DC Converters
• Power management functions
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• ESD Protected up to 2kV
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-523
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Weight: 0.002 grams (approximate)
Drain
SOT-523
Gate
ESD PROTECTED TO 2kV
Top View
Gate
Protection Source
Diode
Equivalent Circuit
Ordering Information (Note 3)
Notes:
Part Number
DMN313DLT-7
Case
SOT-523
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
D
G
S
Top View
Pin-Out
Packaging
3000 / Tape & Reel
Marking Information
NA2 YM
NA2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: X = 2010)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2010
X
Jan
Feb
1
2
DMN313DLT
Document number: DS35078 Rev. 2 - 2
2011
Y
Mar
3
2012
Z
Apr
May
4
5
2013
A
Jun
Jul
6
7
1 of 5
www.diodes.com
2014
B
Aug
Sep
8
9
2015
C
Oct
O
2016
D
Nov
Dec
N
D
August 2011
© Diodes Incorporated