DMN3115UDM Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN3115UDM
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• 60 mΩ @ V_GS = 4.5V
• 80 mΩ @ V_GS = 2.5V
• 130 mΩ @ V_GS = 1.5V
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• ESD Protected Gate
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.015 grams (approximate)
SOT-26
D4 D3 S1
ESD PROTECTED
Top View
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
Symbol
V_DSS
V_GSS
I_D
I_DM
D1 D2 G1
Top View
Internal Schematic
Value
30
±8
3.2
12.8
Units
V
V
A
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
900
139
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BV_DSS 30 ⎯
⎯
V V_GS = 0V, I_D = 100μA
I_DSS
⎯⎯
1
μA V_DS = 30V, V_GS = 0V
I_GSS
⎯ ⎯ ±5 μA V_GS = ±8V, V_DS = 0V
V_GS(th) 0.5 ⎯ 1.0 V V_DS = V_GS, I_D = 250μA
40 60
V_GS = 4.5V, I_D = 6A
R_{DS (ON)} ⎯
50 80 mΩ V_GS = 2.5V, I_D = 2A
76 130
V_GS = 1.5V, I_D = 1.0A
|Y_fs|
⎯
8
⎯
S V_DS =10V, I_D = 6A
V_SD
⎯ 0.7 1.1 V V_GS = 0V, I_S = 2A
C_iss
C_oss
C_rss
⎯ 476 ⎯
⎯ 77 ⎯
⎯ 59 ⎯
pF
pF
V_DS = 15V, V_GS = 0V
f = 1.0MHz
pF
Notes:
1. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
DMN3115UDM
Document number: DS31187 Rev. 6 - 2
1 of 4
www.diodes.com
May 2010
© Diodes Incorporated