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DMN3110S_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
30V
RDS(ON) max
73mΩ @ VGS = 10V
110mΩ @ VGS = 4.5V
ID max
TA = +25°C
3.3A
2.7A
DMN3110S
N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
 Low On-Resistance
 Low Input Capacitance
 Fast Switching Speed
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
 General Purpose Interfacing Switch
 Power Management Functions
 Boost Application
 Analog Switch
Mechanical Data
 Case: SOT-23
 Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections Indicator: See diagram
 Terminals: Finish  NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
 Weight: 0.027 grams (approximate)
Ordering Information (Note 4)
Notes:
Part Number
DMN3110S-7
Case
SOT-23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
Date Code Key
Year
Code
Month
Code
Chengdu A/T Site
2007
U
Jan
1
2008
V
Feb
2
Shanghai A/T Site
MN7 = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
Y̅ M = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y̅ = Year (ex: A = 2013)
M = Month (ex: 9 = September)
2009
W
Mar
3
2010
X
Apr
4
2011
Y
2012
Z
2013
A
2014
B
May
Jun
5
6
Jul
Aug
Sep
7
8
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN3110S
Document number: DS31561 Rev. 3 - 2
1 of 6
www.diodes.com
October 2013
© Diodes Incorporated