DMN3052LSS Datasheet, PDF (1/5 Pages) Diodes Incorporated – SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• 30mΩ @ V_GS = 10V
• 40mΩ @ V_GS = 4.5V
• 63mΩ @ V_GS = 2.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
DMN3052LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.072 grams (approximate)
SO-8
S
D
S
D
S
D
G
D
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Steady
State
Pulsed Drain Current (Note 3)
T_A = 25°C
T_A = 70°C
TOP VIEW
Internal Schematic
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
30
±12
7.1
5.7
28
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
2.5
50
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
BV_DSS
I_DSS
I_GSS
V_GS(th)
R_{DS (ON)}
g_fs
V_SD
C_iss
C_oss
C_rss
Min
Typ
Max
30
⎯
⎯
⎯
⎯
1
⎯
⎯
±80
⎯
⎯
±800
0.62
0.9
1.2
24
30
⎯
30
40
50
63
⎯
10
⎯
⎯
0.78
1.16
⎯
555
⎯
⎯
109
⎯
⎯
82
⎯
Unit
Test Condition
V
V_GS = 0V, I_D = 250μA
μA V_DS = 30V, V_GS = 0V
nA
V_GS = ±12V, V_DS = 0V
V_GS = ±19V, V_DS = 0V
V
V_DS = V_GS, I_D = 250μA
V_GS = 10V, I_D = 7.1A
mΩ V_GS = 4.5V, I_D = 6.4A
V_GS = 2.5V, I_D = 5.0A
S
V_DS = 5V, I_D = 5.1A
V
V_GS = 0V, I_S = 2.1A
pF
pF
V_DS = 5V, V_GS = 0V
f = 1.0MHz
pF
Notes:
1. Device mounted on 2 oz copper pad layout with R_θJA = 50°C/W.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMN3052LSS
Document number: DS31583 Rev. 3 - 2
1 of 5
www.diodes.com
September 2009
© Diodes Incorporated