DMN3051LDM_15 Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• 38 mΩ @ V_GS = 10V
• 64 mΩ @ V_GS = 4.5V
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
DMN3051LDM
N-CHANNEL ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Mechanical Data
• Case: SOT-26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.015 grams (approximate)
SOT-26
D
D
S
TOP VIEW
D
D
G
TOP VIEW
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
30
±20
4.0
16
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
900
139
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
A
A
Units
mW
°C/W
°C
DMN3051LDM
Document number: DS31523 Rev. 3 - 2
1 of 5
www.diodes.com
November 2009
© Diodes Incorporated