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DMN3051LDM Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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Features
⢠Low On-Resistance
⢠38 mΩ @ VGS = 10V
⢠64 mΩ @ VGS = 4.5V
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Lead Free By Design/RoHS Compliant (Note 2)
⢠"Green" Device (Note 3)
⢠Qualified to AEC-Q101 Standards for High Reliability
DMN3051LDM
N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
⢠Case: SOT-26
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminal Connections: See Diagram
⢠Terminals: Finish ⯠Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 4
⢠Ordering Information: See Page 4
⢠Weight: 0.015 grams (approximate)
SOT-26
D
D
S
TOP VIEW
D
D
G
TOP VIEW
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
Symbol
VDSS
VGSS
ID
IDM
Value
30
±20
4.0
16
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
TJ, TSTG
Value
900
139
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, minimum recommended pad layout on 2oz. Copper pads.
2. No purposefully added lead.
3. Diodes Inc.âs âGreenâ policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
A
A
Units
mW
°C/W
°C
DMN3051LDM
Document number: DS31523 Rev. 3 - 2
1 of 5
www.diodes.com
November 2009
© Diodes Incorporated
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