DMN3033LSD Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN3033LSD
Features
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Mechanical Data
• Dual N-Channel MOSFET
• Low On-Resistance
• 22mΩ @ V_GS = 10V
• 33mΩ @ V_GS = 4.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
• Case: SOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072grams (approximate)
SOP-8L
D₁
D₂
S1
D1
G1
D1
G₁
G₂
S2
D2
G2
D2
TOP VIEW
TOP VIEW
Internal Schematic
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Pulsed Drain Current (Note 3)
Steady
State
T_A = 25°C
T_A = 70°C
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
30
±20
6.9
5.8
30
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
2
62.5
-55 to +150
Notes:
1. Device mounted on 2 oz. Copper pads on FR-4 PCB with R_θJA = 62.5°C/W
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
W
°C/W
°C
DMN3033LSD
Document number: DS31262 Rev. 7 - 2
1 of 6
www.diodes.com
July 2009
© Diodes Incorporated