DMN3031LSS Datasheet, PDF (1/6 Pages) Diodes Incorporated – SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• 18.5mΩ @ V_GS = 10V
• 31mΩ @ V_GS = 4.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
DMN3031LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072g (approximate)
SOP-8L
S
D
S
D
S
D
G
D
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Steady
State
Pulsed Drain Current (Note 3)
T_A = 25°C
T_A = 70°C
TOP VIEW
Internal Schematic
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
30
±20
9
6.75
40
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
2.5
50
-55 to +150
Notes:
1. Device mounted on 2 oz copper pad layout with R_θJA = 50°C/W.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
W
°C/W
°C
DMN3031LSS
Document number: DS31650 Rev. 3 - 2
1 of 6
www.diodes.com
July 2009
© Diodes Incorporated