DMN3018SSS Datasheet, PDF (1/6 Pages) Diodes Incorporated – Low On-Resistance

DMN3018SSS
30V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V_(BR)DSS
30V
R_DS(ON) max
21mΩ @ V_GS = 10V
35mΩ @ V_GS = 4.5V
I_D max
T_A = 25°C
7.3A
5.5A
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• ESD Protected Gate
• “Green” component and RoHS compliant (Notes 1 & 2)
• Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R_DS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Backlighting
• Power Management Functions
• DC-DC Converters
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.008 grams (approximate)
ESD PROTECTED
SO-8
Top View
Drain
S
D
S
D
S
D
G
D
Top View
Pin Configuration
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit Per Element
Ordering Information (Note 3)
Notes:
Part Number
DMN3018SSS-13
Case
SO-8
Packaging
2500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
Top View
8
5
N3018SS
YY WW
1
4
Logo
Part no.
Xth week: 01 ~ 53
Year: “11” = 2011
DMN3018SSS
Document number: DS35501 Rev. 5 - 2
1 of 6
www.diodes.com
February 2012
© Diodes Incorporated