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DMN26D0UT Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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Features
⢠Low On-Resistance:
⢠3.0 Ω @ 4.5V
⢠4.0 Ω @ 2.5V
⢠6.0 Ω @ 1.8V
⢠10 Ω @ 1.5V
⢠Very Low Gate Threshold Voltage, 1.0V max
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Ultra-Small Surface Mount Package
⢠ESD Protected Gate
⢠Lead, Halogen, and Antimony Free By Design/RoHS
Compliant (Note 2)
⢠"Green" Device (Note 3)
⢠Qualified to AEC-Q101 Standards for High Reliability
ESD PROTECTED
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DMN26D0UT
N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
⢠Case: SOT-523
⢠Case Material: Molded Plastic, âGreenâ Molding Compound. UL
Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminal Connections: See Diagram
⢠Terminals: Finish â Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
⢠Marking Information: See Page 4
⢠Ordering Information: See Page 4
⢠Weight: 0.002 grams (approximate)
Drain
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
D
G
S
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±10
V
Drain Current (Note 1)
ID
230
mA
Pulsed Drain Current
TP = 10µs
IDM
805
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
PD
RθJA
TJ, TSTG
300
417
-55 to +150
mW
°C/W
°C
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.âs âGreenâ policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
1 of 6
www.diodes.com
September 2009
© Diodes Incorporated
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