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DMN26D0UFB4 Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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DMN26D0UFB4
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
⢠N-Channel MOSFET
⢠Low On-Resistance:
⢠3.0 Ω @ 4.5V
⢠4.0 Ω @ 2.5V
⢠6.0 Ω @ 1.8V
⢠10 Ω @ 1.5V
⢠Very Low Gate Threshold Voltage, 1.2V max
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Ultra-Small Surface Mount Package
⢠ESD Protected Gate
⢠Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
⢠"Green" Device (Note 3)
⢠Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
⢠Case: DFN1006H4-3
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminal Connections: See Diagram
⢠Terminals: Finish â NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
⢠Marking Information: See Page 4
⢠Ordering Information: See Page 4
⢠Weight: 0.001 grams (approximate)
ESD PROTECTED
DFN1006H4-3
Drain
BOTTOM VIEW
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
S
D
G
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±10
V
Drain Current (Note 1)
ID
230
mA
Pulsed Drain Current
TP = 10µs
IDM
805
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 1) @TA = 25°C
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
PD
RθJA
TJ, TSTG
350
357
-55 to +150
mW
°C/W
°C
Notes:
1. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.âs âGreenâ policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN26D0UFB4
Document number: DS31775 Rev. 5 - 2
1 of 6
www.diodes.com
July 2010
© Diodes Incorporated
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