DMN26D0UDJ Datasheet, PDF (1/5 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMN26D0UDJ
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V_(BR)DSS
20V
R_DS(on)
3.0mΩ @ V_GS= 4.5V
6.0mΩ @ V_GS= 1.8V
I_D
T_A = 25°C
240mA
170mA
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
Features and Benefits
• Dual N-Channel MOSFET
• Low On-Resistance:
• 3.0 Ω @ 4.5V
• 4.0 Ω @ 2.5V
• 6.0 Ω @ 1.8V
• 10 Ω @ 1.5V
• Very Low Gate Threshold Voltage, 1.05V max
• Low Input Capacitance
• Fast Switching Speed
• Ultra-Small Surface Mount Package
• ESD Protected Gate (HBM 300V)
• Lead, Halogen, and Antimony Free By Design/RoHS
Compliant (Note 1)
• "Green" Device (Note 2)
Mechanical Data
• Case: SOT-963
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.0027 grams (approximate)
SOT-963
D₁
G₂
S₂
ESD PROTECTED
Top View
S₁
G₁
D₂
Top View
Schematic and Transistor Diagram
Ordering Information (Note 3)
Notes:
Part Number
DMN26D0UDJ-7
Case
SOT-963
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
10,000/Tape & Reel
Marking Information (Note 4)
D₁
G₂
S₂
M1
M1 = Product Type Marking Code
S₁
G₁
D₂
Notes: 4. Package is non-polarized. Parts may be on reel in orientation illustrated, 180° rotated, or mixed (both ways).
DMN26D0UDJ
Document number: DS31481 Rev. 5 - 2
1 of 5
www.diodes.com
December 2010
© Diodes Incorporated