DMN2600UFB Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Fast Switching Speed
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• ESD Protected Gate 1kV
• Qualified to AEC-Q101 Standards for High Reliability
DMN2600UFB
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: DFN1006-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Marking Information: See Page 5
• Ordering Information: See Page 5
• Weight: 0.001 grams (approximate)
ESD PROTECTED TO 1kV
DFN1006-3
Bottom View
S
D
G
Top View
Internal Schematic
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 3)
Steady
State
Pulsed Drain Current
T_A = 25°C
T_A = 85°C
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
25
±8
1.3
0.9
3.0
Unit
V
V
A
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
0.54
234
-55 to +150
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
3. Device mounted on FR-4 substrate PCB board, with minimum recommended pad layout.
Unit
W
°C/W
°C
DMN2600UFB
Document number: DS31983 Rev. 3 - 2
1 of 6
www.diodes.com
July 2010
© Diodes Incorporated