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DMN2500UFB4 Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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DMN2500UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(on) max
0.4Ω @ VGS = 4.5V
0.7Ω @ VGS = 1.8V
ID
TA = 25°C
1A
0.8A
Features and Benefits
⢠Low On-Resistance
⢠Very Low Gate Threshold Voltage VGS(TH), 1.0V max
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Ultra-Small Surfaced Mount Package
⢠Ultra-low package profile, 0.4mm maximum package height
⢠ESD Protected Gate
⢠Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
⢠Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
⢠DC-DC Converters
⢠Power management functions
Mechanical Data
⢠Case: X2-DFN1006-3
⢠Case Material: Molded Plastic, âGreenâ Molding Compound. UL
Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminal Connections: See Diagram
⢠Terminals: Finish â NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
⢠Weight: 0.001 grams (approximate)
Drain
X2-DFN1006-3
ESD PROTECTED
Bottom View
S
D
G
Top View
Internal Schematic
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Ordering Information (Note 3)
Notes:
Part Number
DMN2500UFB4-7
DMN2500UFB4-7B
Case
X2-DFN1006-3
X2-DFN1006-3
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.âs âGreenâ policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DMN2500UFB4-7
NT
Top View
Dot Denotes
Drain Side
DMN2500UFB4-7B
NT
Top View
Bar Denotes Gate
and Source Side
NT = Product Type Marking Code
DMN2500UFB4
Document number: DS35724 Rev. 3 - 2
1 of 5
www.diodes.com
March 2012
© Diodes Incorporated
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