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DMN2400UV_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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Features
⢠Low On-Resistance
⢠Low Gate Threshold Voltage
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠ESD Protected up to 2kV
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
⢠Qualified to AEC-Q101 standards for High Reliability
DMN2400UV
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
⢠Case: SOT-563
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminals: Finish ⯠Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
⢠Terminal Connections: See Diagram
⢠Weight: 0.006 grams (approximate)
SOT-563
D2
G1
S1
ESD PROTECTED TO 2kV
Top View
Bottom View
S2
G2
D1
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMN2400UV-7
DMN2400UV-13
Case
SOT-563
SOT-563
1. No purposefully added lead.
2. Diodes Inc.âs âGreenâ policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
3,000/Tape & Reel
10,000/Tape & Reel
Marking Information
24N YM
NAB YM
24N and NAB = Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2009
W
Jan
Feb
1
2
2010
X
Mar
3
2011
Y
Apr
May
4
5
2012
Z
Jun
Jul
6
7
2013
A
Aug
Sep
8
9
2014
B
Oct
O
2015
C
Nov
Dec
N
D
DMN2400UV
Document number: DS31852 Rev. 7 - 2
1 of 6
www.diodes.com
January 2011
© Diodes Incorporated
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