DMN2400UFB4 Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• UItra-Small Surface Mount Package
• Ultra-Low Package Profile, 0.4mm Maximum Package Height
• Lead Free By Design/RoHS Compliant (Note 1)
• ESD Protected up to 1.5kV
• "Green" Device (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
DMN2400UFB4
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: DFN1006H4-3
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: Collector Dot
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
ESD PROTECTED TO 1.5kV
DFN1006H4-3
BOTTOM VIEW
S
D
G
TOP VIEW
Package Pin Configuration
Drain
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Ordering Information (Note 3)
Notes:
Part Number
DMN2400UFB4-7
Case
DFN1006H4-3
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
3000/Tape & Reel
Marking Information
NC
NC = Product Type Marking Code
Dot Denotes Drain Side
DMN2400UFB4
Document number: DS32025 Rev. 3 - 2
1 of 6
www.diodes.com
October 2010
© Diodes Incorporated