DMN2300UFD_15 Datasheet, PDF (1/7 Pages) Diodes Incorporated – 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary
V_(BR)DSS
20V
R_DS(on) Max
200mΩ @ V_GS = 4.5V
260mΩ @ V_GS = 2.5V
400mΩ @ V_GS = 1.8V
500mΩ @ V_GS = 1.5V
I_D max
T_A = 25°C
(Notes 4)
1.73A
1.50A
1.27A
1.15A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R_DS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load switch
A Product Line of
Diodes Incorporated
DMN2300UFD
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low Gate Threshold Voltage
• Fast Switching Speed
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 2KV
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: X1-DFN1212-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ۛ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.005 grams (approximate)
X1-DFN1212-3
Drain
Gate
Body
Diode
Top View
Bottom View
Ordering Information (Note 3)
Part Number
DMN2300UFD-7
Marking
KS2
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Gate
Protection
Diode
Source
Equivalent Circuit
Tape width (mm)
8
Pin-out Top view
Quantity per reel
3000
Marking Information
KS2 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
Feb
1
2
2012
Z
Mar
3
2013
A
Apr
May
4
5
2014
B
Jun
Jul
6
7
2015
C
Aug
Sep
8
9
2016
D
Oct
O
2017
E
Nov
Dec
N
D
DMN2300UFD
Datasheet Number: DS35443 Rev. 2 - 2
1 of 7
www.diodes.com
September 2011
© Diodes Incorporated