DMN2300UFB4 Datasheet, PDF (1/6 Pages) Diodes Incorporated – 20V N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary
V_(BR)DSS
20V
R_DS(on)
175mΩ @ V_GS = 4.5V
240mΩ @ V_GS = 2.5V
360mΩ @ V_GS = 1.8V
I_D max
T_A = 25°C
(Notes 4)
1.30A
1.11A
0.91A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(R_DS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• Load switch
A Product Line of
Diodes Incorporated
DMN2300UFB4
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Footprint of just 0.6mm² – thirteen times smaller than SOT23
• 0.4mm profile – ideal for low profile applications
• Low Gate Threshold Voltage
• Fast Switching Speed
• “Lead Free”, RoHS Compliant (Note 1)
• Halogen and Antimony Free. "Green" Device (Note 2)
• ESD Protected Gate 2KV
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: DFN1006H4-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Weight: 0.001 grams (approximate)
Drain
DFN1006H4-3
ESD PROTECTED TO 2kV
Bottom View
S
D
G
Top View
Internal Schematic
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMN2300UFB4-7B
Marking
NL
Reel size (inches)
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Tape width (mm)
8
Quantity per reel
10,000
Marking Information
DMN2300UFB4-7B
NL
NL = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
DMN2300UFB4
Document number: DS35269 Rev. 2 - 2
1 of 6
www.diodes.com
May 2011
© Diodes Incorporated