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DMN2300UFB Datasheet, PDF (1/6 Pages) Diodes Incorporated – 20V N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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Product Summary
V(BR)DSS
20V
RDS(on)
175mΩ @ VGS= 4.5V
240mΩ @ VGS= 2.5V
360mΩ @ VGS= 1.8V
ID max
TA = 25°C
(Note 4)
1.30A
1.11A
0.91A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
⢠Load switch
A Product Line of
Diodes Incorporated
DMN2300UFB
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
⢠Footprint of just 0.6mm2 â thirteen times smaller than SOT23
⢠0.5mm profile â ideal for low profile applications
⢠On resistance <200mΩ @ VGS = 4.5V
⢠Low Gate Threshold Voltage
⢠Fast Switching Speed
⢠âLead Freeâ, RoHS Compliant (Note 1)
⢠Halogen and Antimony Free. "Green" Device (Note 2)
⢠ESD Protected Gate 2KV
⢠Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
⢠Case: DFN1006-3
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminals: Finish â NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
⢠Weight: 0.001 grams (approximate)
Drain
DFN1006-3
ESD PROTECTED TO 2kV
Bottom View
S
D
G
Top View
Internal Schematic
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
Ordering Information (Note 3)
Part Number
DMN2300UFB-7
DMN2300UFB-7B
Marking
NI
NI
Reel size (inches)
7
7
Notes:
1. No purposefully added lead
2. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Tape width (mm)
8
8
Quantity per reel
3,000
10,000
Marking Information
DMN2300UFB-7
NI
Top View
Dot Denotes
Drain Side
DMN2300UFB
Document number: DS35235 Rev. 1 - 2
DMN2300UFB-7B
NI
NI = Product Type Marking Code
Top View
Bar Denotes Gate
and Source Side
1 of 6
www.diodes.com
May 2011
© Diodes Incorporated
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