DMN2215UDM Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2215UDM
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Dual N-Channel MOSFET
• Low On-Resistance
• 100mΩ @V_GS = 4.5V, I_D = 2.5A
• 140mΩ @V_GS = 2.5V, I_D = 1.5A
• 215mΩ @V_GS = 1.8V, I_D = 1A
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• ESD Protected Gate to 2kV HBM
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability
• Case: SOT-26
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.015 grams (approximate)
G₁
D₁
SOT-26
S₂
S₁
ESD PROTECTED TO 2kV
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Drain Current (Note 1)
Pulsed Drain Current ( Note 4)
T_A = 25°C
T_A = 85°C
G₂
D₂
TOP VIEW
Schematic and Pin Configuration
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
20
±12
2.0
1.4
7.0
Units
V
V
A
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
650
192
-55 to +150
Notes:
1. Device mounted on FR-4 PCB, or minimum recommended pad layout
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Pulse width ≤ 10μs, duty cycle ≤ 1%.
Units
mW
°C/W
°C
DMN2215UDM
Document number: DS31176 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated