DMN2170U Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2170U
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Low On-Resistance
• 70mΩ @V_GS = 4.5V
• 100mΩ @V_GS = 2.5V
• 170mΩ @V_GS = 1.5V
• Very Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead, Halogen and Antimony Free, RoHS Compliant
"Green" Device (Notes 2, 3 and 6)
• Qualified to AEC-Q101 Standards for High Reliability
• ESD Protected Gate
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
Drain
SOT-23
D
ESD PROTECTED TO 3kV
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
Characteristic
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
G
S
TOP VIEW
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
20
±12
2.3
8
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
600
208
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol Min Typ Max Unit
Test Condition
BV_DSS 20 28 ⎯
V V_GS = 0V, I_D = 10μA
I_DSS
⎯⎯
1
μA V_DS = 20V, V_GS = 0V
I_GSS
⎯ ⎯ ±10 μA V_GS = ±12V, V_DS = 0V
V_GS(th) 0.45 ⎯ 1.0
V V_DS = V_GS, I_D = 250μA
50 70
V_GS = 4.5V, I_D = 3A
R_{DS (ON)} ⎯ 70 100 mΩ VGS = 2.5V, ID = 2.3A
125 170
V_GS = 1.5V, I_D = 0.5A
|Y_fs|
⎯
6
⎯
S V_DS =5V, I_D = 2.4A
V_SD
⎯ 0.7 0.9 V V_GS = 0V, I_S = 1.05A
C_iss
C_oss
C_rss
⎯ 217 ⎯
⎯ 62 ⎯
⎯ 34 ⎯
pF
pF
V_DS = 10V, V_GS = 0V
f = 1.0MHz
pF
Notes:
1. Device mounted on FR-4 PCB, on minimum recommended, 2oz Copper pad layout.
2. No purposefully added lead. Halogen and Antimony Free.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
6. Product manufactured with Green Molding Compound and does not contain Halogens or Sb₂O₃ Fire Retardants.
DMN2170U
Document number: DS31182 Rev. 4 - 2
1 of 4
www.diodes.com
June 2008
© Diodes Incorporated