DMN2114SN Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2114SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Power Circuits
• Lead Free By Design/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• ESD Protected Gate
• "Green" Device (Note 3)
Mechanical Data
A
D
G TOP VIEW S
E
D
G
H
BC
• Case: SC-59
• Case Material - Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
K
M
J
L
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish – Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Drain
• Terminal Connections: See Diagram
• Marking Information: See Page 4
• Ordering & Date Code Information: See Page 4
• Weight: 0.008 grams (approximate)
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
ESD protected
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Pulsed
V_DSS
V_GSS
I_D
P_d
R_θJA
T_j, T_STG
20
±12
1.2
4.0
500
250
-55 to +150
Notes:
1. Pulse width ≤300μS, duty cycle ≤2%.
2. No purposefully added lead.
3. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
SC-59
Dim Min Max
A 0.30 0.50
B 1.40 1.80
C 2.50 3.00
D 0.85 1.05
E 0.30 0.70
G 1.70 2.10
H 2.70 3.10
J
⎯
0.10
K 1.00 1.40
L 0.55 0.70
M 0.10 0.35
α
0°
8°
All Dimensions in mm
Unit
V
V
A
mW
°C /W
°C
DS30829 Rev. 3 - 2
1 of 4
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DMN2114SN
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