DMN2112SN_0711 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2112SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
• Lead Free By Design/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• ESD Protected Gate
• "Green" Device (Note 3)
Mechanical Data
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SC-59
Case: SC-59
Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminals: Finish Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
D
Gate
ESD Protected
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Characteristic
Continuous
Continuous
Pulsed
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
G
S
TOP VIEW
Pin Out Configuration
Symbol
V_DSS
V_GSS
I_D
Value
20
±8
1.2
4.0
Units
V
V
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_d
R_θJA
T_j, T_STG
Value
500
250
-55 to +150
Units
mW
°C /W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Turn-Off Delay Time
Turn-On Rise Time
Turn-Off Fall Time
Symbol Min
Typ
Max Unit
Test Condition
BV_DSS
20
@ T_j = 25°C
I_DSS
⎯
I_GSS
⎯
⎯
⎯
V V_GS = 0V, I_D = 250µA
⎯
10
µA V_DS = 20V, V_GS = 0V
⎯
± 10
µA V_GS = ± 8V, V_DS = 0V
V_GS(th)
0.5
R_{DS (ON)}
⎯
IY_fsI
⎯
V_SD
⎯
⎯
1.2
0.10
⎯
0.14
0.25
4.2
⎯
0.8
1.1
V V_DS = 10V, I_D = 1.0mA
V_GS = 4.5V, I_D = 0.5A
Ω V_GS = 2.5V, I_D = 0.5A
V_GS = 1.5V, I_D = 0.1A
S V_DS = 10V, I_D =0.5A
V V_GS = 0V, I_S = 1A
C_iss
⎯
220
⎯
C_oss
⎯
120
⎯
C_rss
⎯
45
⎯
pF
pF
V_DS = 10V, V_GS = 0V
f = 1.0MHz
pF
t_D(ON)
⎯
10
⎯
ns
t_D(OFF)
⎯
75
⎯
ns V_DD = 5V, I_D = 0.5A,
t_r
⎯
15
⎯
ns VGS = 10V, RGEN = 50Ω
t_f
⎯
65
⎯
ns
Notes:
1. Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DMN2112SN
Document number: DS30830 Rev. 4 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated