DMN2112SN Datasheet, PDF (1/3 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2112SN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Ideal for Notebook Computer, Portable Phone, PCMCIA
Cards, and Battery Powered Circuits
• Lead Free By Design/RoHS Compliant (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• ESD Protected Gate
• "Green" Device (Note 3)
Mechanical Data
• Case: SC-59
• Case Material - Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminals: Finish Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Terminal Connections: See Diagram
• Marking Information: See Page 3
• Ordering & Date Code Information: See Page 3
• Weight: 0.008 grams (approximate)
A
D
BC
G TOP VIEW S
E
D
G
H
K
J
Drain
Gate
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
M
L
ESD Protected
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Characteristic
Total Power Dissipation
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Continuous
Pulsed
Symbol
V_DSS
V_GSS
I_D
P_d
R_θJA
T_j, T_STG
Value
20
±8
1.2
4.0
500
250
-55 to +150
SC-59
Dim Min Max
A 0.30 0.50
B 1.40 1.80
C 2.50 3.00
D 0.85 1.05
E 0.30 0.70
G 1.70 2.10
H 2.70 3.10
J
⎯ 0.10
K 1.00 1.40
L
0.55 0.70
M 0.10 0.35
α
0°
8°
All Dimensions in mm
Units
V
V
A
mW
°C /W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 1)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
Symbol Min
Typ
Max Unit
Test Condition
BV_DSS
20
@ T_j = 25°C
I_DSS
⎯
I_GSS
⎯
⎯
⎯
V V_GS = 0V, I_D = 250µA
⎯
10
µA V_DS = 20V, V_GS = 0V
⎯
± 10
µA V_GS = ± 8V, V_DS = 0V
V_GS(th)
0.5
⎯
1.2
V V_DS = 10V, I_D = 1.0mA
Static Drain-Source On-Resistance
R_{DS (ON)}
⎯
0.10
V_GS = 4.5V, I_D = 0.5A
⎯
0.14
Ω V_GS = 2.5V, I_D = 0.5A
0.25
V_GS = 1.5V, I_D = 0.1A
Forward Transfer Admittance
IY_fsI
⎯
4.2
⎯
S V_DS = 10V, I_D =0.5A
Diode Forward Voltage
V_SD
⎯
0.8
1.1
V V_GS = 0V, I_S = 1A
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C_iss
⎯
220
⎯
C_oss
⎯
120
⎯
C_rss
⎯
45
⎯
pF
pF
V_DS = 10V, V_GS = 0V
f = 1.0MHz
pF
SWITCHING CHARACTERISTICS
Turn-On Delay Time
t_D(ON)
⎯
10
⎯
ns
Turn-Off Delay Time
Turn-On Rise Time
t_D(OFF)
⎯
75
⎯
ns V_DD = 5V, I_D = 0.5A,
t_r
⎯
15
⎯
ns VGS = 10V, RGEN = 50Ω
Turn-Off Fall Time
t_f
⎯
65
⎯
ns
Notes:
1. Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. No purposefully added lead.
3. Diodes Inc.'s "Green" Policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
DS30830 Rev. 3 - 2
1 of 3
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DMN2112SN
© Diodes Incorporated