DMN2104L Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2104L
Features
N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Low On-Resistance
• 53mΩ @V_GS = 4.5V
• 104mΩ @V_GS = 2.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.008 grams (approximate)
SOT-23 _Drain
D
Gate
TOP VIEW
Source
Equivalent Circuit
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 3)
Pulsed Drain Current (Note 4)
Symbol
V_DSS
V_GSS
I_D
I_DM
G
S
TOP VIEW
Value
20
±12
4.3
15
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient (Note 3)
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1.4
90
-55 to +150
Units
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
BV_DSS
I_DSS
I_GSS
V_GS(th)
R_{DS (ON)}
|Y_fs|
V_SD
C_iss
C_oss
C_rss
Min
20
⎯
⎯
0.45
⎯
⎯
⎯
⎯
⎯
⎯
Typ Max Unit
Test Condition
⎯
⎯
V V_GS = 0V, I_D = 250μA
⎯
500 nA V_DS = 20V, V_GS = 0V
⎯
±100 nA V_GS = ±12V, V_DS = 0V
⎯
1.4
V V_DS = V_GS, I_D = 250μA
42
84
53
104
mΩ ^{VGS = 4.5V, ID = 4.2A}
V_GS = 2.5V, I_D = 3.1A
6.6
⎯
S V_DS =5V, I_D = 4.2A
0.7
1.2
V V_GS = 0V, I_S = 1.0A
325
⎯
pF
92
⎯
pF ^{VDS = 10V, VGS = 0V}
f = 1.0MHz
70
⎯
pF
Notes:
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, on 2oz Copper pad layout with R_θJA = 90°C/W.
4. Repetitive rating, pulse width limited by junction temperature.
5. Short duration pulse test used to minimize self-heating effect.
DMN2104L
Document number: DS31560 Rev. 1 - 2
1 of 4
www.diodes.com
October 2008
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