DMN2100UDM Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2100UDM
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Low On-Resistance
• Case: SOT-26
• 55 mΩ @ V_GS = 4.5V
• 70 mΩ @ V_GS = 2.5V
• 90 mΩ @ V_GS = 1.8V
• 130 mΩ @ V_GS = 1.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• ESD Protected Gate
• Lead Free By Design/RoHS Compliant (Note 2)
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 3
• Ordering Information: See Page 3
• Weight: 0.015 grams (approximate)
• "Green" Device (Note 3)
• Qualified to AEC-Q101 Standard for High Reliability
D⁶1
S⁵1
D2⁴
SOT-26
D
D
S
ESD PROTECTED
G₁1
S22
G32
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 1)
D
D
G
TOP VIEW
Internal Schematic
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
20
±8
3.3
13
Units
V
V
A
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
900
139
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol Min Typ Max Unit
BV_DSS
20
⎯
⎯
V
I_DSS
⎯
⎯
1
μA
I_GSS
⎯
⎯
±1
μA
V_GS(th)
0.6
⎯
1.0
V
R_{DS (ON)}
⎯
32
55
43
56
70
90
mΩ
80
130
Forward Transfer Admittance
Diode Forward Voltage (Note 4)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
|Y_fs|
V_SD
C_iss
C_oss
C_rss
⎯
8
⎯
S
⎯
0.7
1.1
V
⎯
555
⎯
pF
⎯
112
⎯
pF
⎯
84
⎯
pF
Notes:
1. Device mounted on FR-4 PCB, or minimum recommended pad layout with 2oz. copper pads.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
4. Short duration pulse test used to minimize self-heating effect.
Test Condition
V_GS = 0V, I_D = 250μA
V_DS = 20V, V_GS = 0V
V_GS = ±8V, V_DS = 0V
V_DS = V_GS, I_D = 250μA
V_GS = 4.5V, I_D = 6A
V_GS = 2.5V, I_D = 4.0A
V_GS = 1.8V, I_D = 1.5A
V_GS = 1.5V, I_D = 1.0A
V_DS =10V, I_D = 6A
V_GS = 0V, I_S = 2A
V_DS = 10V, V_GS = 0V
f = 1.0MHz
DMN2100UDM
Document number: DS31186 Rev. 4 - 2
1 of 4
www.diodes.com
January 2009
© Diodes Incorporated