DMN2075UDW Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary
V_(BR)DSS
20V
R_{DS(on) max}
48mΩ @ V_GS = 4.5V
59mΩ @ V_GS = 2.5V
I_D
T_A = 25°C
2.8A
2.6A
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• DC-DC Converters
• Power management functions
DMN2075UDW
N-CHANNEL ENHANCEMENT MODE MOSFET
Benefit and Features
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT363
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
• Terminals Connections: See Diagram Below
• Weight: 0.006 grams (approximate)
SOT363
D
D
S
Top View
D
D
G
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMN2075UDW-7
Case
SOT363
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com
3. For packaging details, go to our website at http://www.diodes.com
Marking Information
Packaging
3000/Tape & Reel
G22
G22 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
Feb
1
2
2012
Z
Mar
3
2013
A
Apr
May
4
5
2014
B
Jun
Jul
6
7
2015
C
Aug
Sep
8
9
2016
D
Oct
O
2017
E
Nov
Dec
N
D
DMN2075UDW
Document number: DS35542 Rev. 1 - 2
1 of 6
www.diodes.com
September 2011
© Diodes Incorporated