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DMN2065UW_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – 20V N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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Product Summary
V(BR)DSS
20V
RDS(ON) max
56m⦠@ VGS = 4.5V
65m⦠@ VGS = 2.5V
93m⦠@ VGS = 1.8V
140m⦠@ VGS = 1.5V
ID max
TA = 25°C
2.8A
2.6A
2.2A
1.8A
DMN2065UW
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
⢠Low On-Resistance
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Lead Free By Design/RoHS Compliant (Note 1)
⢠"Green" Device (Note 2)
⢠Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
⢠General Purpose Interfacing Switch
⢠Power Management Functions
⢠DC-DC Converters
⢠Analog Switch
Mechanical Data
⢠Case: SOT323
⢠Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminal Connections Indicator: See diagram
⢠Terminals: Finish ⯠Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
⢠Weight: 0.027 grams (approximate)
SOT323
Drain
D
Top View
Gate
Source
Equivalent Circuit
G
S
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMN2065UW-7
Case
SOT323
1. No purposefully added lead.
2. Diodes Inc.âs âGreenâ policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
3000/Tape & Reel
Marking Information
DMH
DMH = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
Feb
1
2
DMN2065UW
Document number: DS35554 Rev. 1 â 2
2012
Z
Mar
3
2013
A
Apr
May
4
5
2014
B
Jun
Jul
6
7
1 of 6
www.diodes.com
2015
C
Aug
Sep
8
9
2016
D
Oct
O
2017
E
Nov
Dec
N
D
October 2011
© Diodes Incorporated
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