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DMN2065UW Datasheet, PDF (1/6 Pages) Diodes Incorporated – Low On-Resistance
Product Summary
V(BR)DSS
20V
RDS(ON) max
56mΩ @ VGS = 4.5V
65mΩ @ VGS = 2.5V
93mΩ @ VGS = 1.8V
140mΩ @ VGS = 1.5V
ID max
TA = 25°C
2.8A
2.6A
2.2A
1.8A
DMN2065UW
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
• Low On-Resistance
• Low Input Capacitance
• Fast Switching Speed
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
• General Purpose Interfacing Switch
• Power Management Functions
• DC-DC Converters
• Analog Switch
Mechanical Data
• Case: SOT323
• Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections Indicator: See diagram
• Terminals: Finish ⎯ Matte Tin annealed over Alloy42 leadframe.
Solderable per MIL-STD-202, Method 208
• Weight: 0.027 grams (approximate)
SOT323
Drain
D
Top View
Gate
Source
Equivalent Circuit
G
S
Top View
Ordering Information (Note 3)
Notes:
Part Number
DMN2065UW-7
Case
SOT323
1. No purposefully added lead.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Packaging
3000/Tape & Reel
Marking Information
DMH
DMH = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: Y = 2011)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2011
Y
Jan
Feb
1
2
DMN2065UW
Document number: DS35554 Rev. 1 – 2
2012
Z
Mar
3
2013
A
Apr
May
4
5
2014
B
Jun
Jul
6
7
1 of 6
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2015
C
Aug
Sep
8
9
2016
D
Oct
O
2017
E
Nov
Dec
N
D
October 2011
© Diodes Incorporated