DMN2041LSD Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DMN2041LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
TOP VIEW
SO-8
D₁
S1
D1
G1
D1
G₁
S2
D2
G2
D2
TOP VIEW
Internal Schematic
S₁
N-Channel MOSFET
D₂
G₂
S₂
N-Channel MOSFET
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 3)
Characteristic
Pulsed Drain Current (Note 4)
Steady
State
T_A = 25°C
T_A = 85°C
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
20
±12
7.63
4.92
30
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 3)
Thermal Resistance, Junction to Ambient @T_A = 25°C
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
1.16
107.4
-55 to +150
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by function temperature.
Unit
W
°C/W
°C
DMN2041LSD
Document number: DS31964 Rev. 2 - 2
1 of 6
www.diodes.com
October 2009
© Diodes Incorporated