DMN2040LSD Datasheet, PDF (1/4 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Dual N-Channel MOSFET
• Low On-Resistance
• 26mΩ @ V_GS = 4.5V
• 36mΩ @ V_GS = 2.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q 101 Standards for High Reliability
DMN2040LSD
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
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Mechanical Data
• Case: SOP-8L
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
SOP-8L
D₁
D₂
TOP VIEW
S1
D1
G1
D1
S2
D2
G2
D2
TOP VIEW
Internal Schematic
G₁
G₂
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Pulsed Drain Current (Note 3)
Steady
State
T_A = 25°C
T_A = 70°C
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
20
±12
7.0
5.6
30
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
2
62.5
-55 to +150
Unit
W
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
BV_DSS
I_DSS
I_GSS
V_GS(th)
R_{DS (ON)}
Min
Typ
Max Unit
20
⎯
⎯
V
⎯
⎯
1
μA
⎯
⎯
±100 nA
0.6
⎯
1.2
V
⎯
19
26
26
36
mΩ
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
g_fs
V_SD
C_iss
C_oss
C_rss
⎯
12
⎯
ms
0.5
⎯
1.2
V
⎯
562
⎯
pF
⎯
75
⎯
pF
⎯
65
⎯
pF
Notes:
1. Device mounted on 2 oz. Copper pads on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMN2040LSD
Document number: DS31517 Rev. 4 - 2
1 of 4
www.diodes.com
Test Condition
V_GS = 0V, I_D = 250μA
V_DS = 20V, V_GS = 0V
V_GS = ±12V, V_DS = 0V
V_DS = V_GS, I_D = 250μA
V_GS = 4.5V, I_D = 6.0A
V_GS = 2.5V, I_D = 5.2A
V_DS = 10V, I_D = 6.0A
V_GS = 0V, I_S = 1.7A
V_DS = 10V, V_GS = 0V
f = 1.0MHz
November 2008
© Diodes Incorporated