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DMN2028USS Datasheet, PDF (1/8 Pages) Diodes Incorporated – 20V N-CHANNEL ENHANCEMENT MODE MOSFET | |||
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Product Summary
V(BR)DSS
20V
RDS(on) max
20mΩ @ VGS= 4.5V
28mΩ @ VGS= 2.5V
ID max
TA = 25°C
(Note 3)
9.8A
8.3A
Description and Applications
This MOSFET has been designed to minimize the on-state resistance
(RDS(on)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
⢠Battery charging
⢠Power management functions
⢠DC-DC converters
⢠Portable power adaptors
SO-8
S
S
S
G
ESD PROTECTED TO 2kV
Top View
A Product Line of
Diodes Incorporated
DMN2028USS
20V N-CHANNEL ENHANCEMENT MODE MOSFET
Features and Benefits
⢠Low On-Resistance
⢠Low Input Capacitance
⢠Fast Switching Speed
⢠Low Output Leakage
⢠ESD Protected Up to 2kV
⢠Lead Free/RoHS Compliant (Note 1)
⢠Halogen and Antimony Free. "Green" Device (Note 1)
⢠Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
⢠Case: SO-8
⢠Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating 94V-0 (Note 1)
⢠Moisture Sensitivity: Level 1 per J-STD-020
⢠Terminal Connections: See Diagram Below
⢠Terminals: Finish â Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208
⢠Weight: 0.074 grams (approximate)
Top View
D
D
D
DG
D
S
Equivalent Circuit
Ordering Information (Note 1)
Product
DMN2028USS-13
Marking
N2028US
Reel size (inches)
13
Tape width (mm)
12
Quantity per reel
2,500
Notes: 1. No purposefully added lead. Diodes Inc.'s "Green" policy and packaging details can be found on our website at http://www.diodes.com
Marking Information
N2028US
YY WW
= Manufacturerâs Marking
N2028US = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 10 = 2010)
WW = Week (01-53)
DMN2028USS
Document number: DS32075 Rev. 3 - 2
1 of 8
www.diodes.com
October 2010
© Diodes Incorporated
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