DMN2016LFG Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2016LFG
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V_(BR)DSS
20V
R_{DS(on) max}
18mΩ @ V_GS = 4.5V
30mΩ @ V_GS = 1.8V
I_D
T_A = 25°C
5.2A
4.0A
Features and Benefits
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• ESD Protected Gate
• Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1)
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (R_DS(on)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
• Power management functions
• Battery Pack
• Load Switch
Mechanical Data
• Case: U-DFN3030-8
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram Below
• Weight: 0.0172 grams (approximate)
U-DFN3030-8
5
6
7
8
D1/D2
8
7
6
5
ESD PROTECTED TO 2kV
Top View
Bottom View
G2 S2 G1 S1
4
3
2
1
Bottom View
Pin Configuration
1
2
3
4
Top View
Equivalent Circuit
Ordering Information (Note 6)
Notes:
Part Number
DMN2016LFG-7
Case
U-DFN3030-8
1. No purposefully added lead. Halogen and Antimony Free.
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com
Packaging
3000 / Tape & Reel
Marking Information
N20
N20 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last digit of year (ex: 09 for 2009)
WW = Week code (01 to 53)
DMN2016LFG
Document number: DS32053 Rev. 3 - 2
1 of 6
www.diodes.com
January 2012
© Diodes Incorporated