DMN2009LSS Datasheet, PDF (1/5 Pages) Diodes Incorporated – 5SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Low On-Resistance
• 8mΩ @ V_GS = 10V
• 9mΩ @ V_GS = 4.5V
• 12mΩ @ V_GS = 2.5V
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
DMN2009LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SO-8
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminals Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.072 grams (approximate)
SO-8
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Characteristic
Pulsed Drain Current (Note 3)
Steady
State
T_A = 25°C
T_A = 70°C
S
D
S
D
S
D
G
D
TOP VIEW
Internal Schematic
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
20
±12
12
9.6
42
Units
V
V
A
A
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
2
62.5
-55 to +150
Notes:
1. Device mounted on 2 oz, FR-4 PCB, with R_θJA = 62.5°C/W
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
W
°C/W
°C
DMN2009LSS
Document number: DS31409 Rev. 6- 2
1 of 5
www.diodes.com
June 2010
© Diodes Incorporated