DMN2005LPK_0710 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2005LPK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 3)
• ESD Protected Gate
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
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DFN1006-3
Case: DFN1006-3
Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering Information: See Page 3
Weight: 0.001 grams (approximate)
Drain
BOTTOM VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 1)
S
D
G
TOP VIEW
Internal Schematic
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
Symbol
V_DSS
V_GSS
I_D
Value
20
±10
440
Unit
V
V
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_j, T_STG
Value
450
218
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Symbol Min
Typ
Max
OFF CHARACTERISTICS (Note 4)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 4)
BV_DSS
20
⎯
⎯
I_DSS
⎯
⎯
10
I_GSS
⎯
⎯
±5
Gate Threshold Voltage
Static Drain-Source On-Resistance
V_GS(th)
0.53
⎯
1.2
⎯
1.2
1.5
⎯
1.3
1.7
R_{DS (ON)}
⎯
⎯
1.2
1.7
2.4
3.5
⎯
2.5
3.5
Forward Transfer Admittance
|Y_fs|
40
⎯
⎯
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead
3. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php
4. Short duration pulse test used to minimize self-heating effect.
Unit
V
μA
μA
V
Ω
mS
Test Condition
V_GS = 0V, I_D = 100μA
V_DS = 17V, V_GS = 0V
V_GS = ±8V, V_DS = 0V
V_DS = V_GS, I_D = 100μA
V_GS = 4V, I_D = 10mA
V_GS = 2.7V, I_D = 200mA
V_GS = 2.5V, I_D = 10mA
V_GS = 1.8V, I_D = 200mA
V_GS = 1.5V, I_D = 1mA
V_DS = 3V, I_D = 10mA
DMN2005LPK
Document number: DS30836 Rev. 7 - 2
1 of 4
www.diodes.com
October 2007
© Diodes Incorporated