DMN2005LPK Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2005LPK
Lead-free Green N-CHANNEL ENHANCEMENT MODE
FIELD EFFECT TRANSISTOR
Features
UNDER DEVELOPMENT
· Low On-Resistance
· Low Gate Threshold Voltage
· Fast Switching Speed
· Low Input/Output Leakage
· Ultra-Small Surface Mount Package
· Lead Free By Design/RoHS Compliant (Note 2)
· "Green" Device (Note 4)
· ESD Protected Gate
Mechanical Data
· Case: DFN1006-3
· Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating
94V-0
· Moisture Sensitivity: Level 1 per J-STD-020C
· Terminals Connections: See Diagram
· Terminals: Finish ¾ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
· Marking: See Last Page
· Ordering & Date Code Information: See Last Page
G
H
A
K
BC
M
D
N
L
G
D
S
TOP VIEW
Drain
DFN1006-3
Dim Min Max Typ
A 0.95 1.075 1.00
B 0.55 0.675 0.60
C 0.45 0.55 0.50
D 0.20 0.30 0.25
G 0.47 0.53 0.50
H
0 0.05 0.03
K 0.10 0.20 0.15
L 0.20 0.30 0.25
M¾
¾ 0.35
N¾
¾ 0.40
All Dimensions in mm
Gate
Body
Diode
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
ESD protected
Maximum Ratings @ T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Characteristic
Drain Current per element (Note 1)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Continuous
Pulsed (Note 3)
Symbol
V_DSS
VGSS
ID
P_d
R_qJA
Tj, TSTG
Value
20
±8
200
250
200
625
-65 to +150
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width £10mS, Duty Cycle £1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
mA
mW
°C/W
°C
DS30836 Rev. 3 - 1
1 of 4
www.diodes.com
DMN2005LPK
ã Diodes Incorporated