DMN2005LP4K_15 Datasheet, PDF (1/7 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

Features
 Low On-Resistance
 Very Low Gate Threshold Voltage, 0.9V Max.
 Fast Switching Speed
 Low Input/Output Leakage
 Ultra-Small Surface Mount Package
 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
 Halogen and Antimony Free. “Green” Device (Note 3)
 ESD Protected Gate
 Ultra Low Profile Package
 Qualified to AEC-Q101 Standards for High Reliability
DMN2005LP4K
N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
 Case: X2-DFN1006-3
 Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
 Moisture Sensitivity: Level 1 per J-STD-020
 Terminal Connections: See Diagram
 Terminals: Finish  NiPdAu over Copper leadframe; Solderable
per MIL-STD-202, Method 208 e4
 Weight: 0.001 grams (Approximate)
ESD PROTECTED
Drain
X2-DFN1006-3
Bottom View
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
S
D
G
Top View
Pin-Out
Ordering Information (Note 4)
Part Number
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN2005LP4K-7
DN
7
8
3,000
DMN2005LP4K-7B
DN
7
8
10,000
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
DMN2005LP4K
Document number: DS30799 Rev. 8 - 2
1 of 7
www.diodes.com
May 2015
© Diodes Incorporated