DMN2005LP4K_09 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2005LP4K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
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Features
Mechanical Data
• Low On-Resistance
• Very Low Gate Threshold Voltage, 0.9V Max.
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• ESD Protected Gate
• Ultra Low Profile Package
• Qualified to AEC-Q101 Standards for High Reliability
• Case: DFN1006H4-3
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020D
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.001 grams
DFN1006H4-3
Drain
ESD protected
BOTTOM VIEW
Gate
Body
Diode
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
S
D
G
TOP VIEW
Pin Out Configuration
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
V_DSS
20
V
Gate-Source Voltage
V_GSS
±10
V
Drain Current per element (Note 1)
Continuous
Pulsed (Note 3)
I_D
200
250
mA
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Symbol
P_D
Value
200
Thermal Resistance, Junction to Ambient
R_θJA
625
Operating and Storage Temperature Range
T_J, T_STG
-65 to +150
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
mW
°C/W
°C
DMN2005LP4K
Document number: DS30799 Rev. 4 - 2
1 of 4
www.diodes.com
March 2009
© Diodes Incorporated