DMN2005LP4K Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODEL: DMN2005LP4K
DMN2005LP4K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Very Low Gate Threshold Voltage, 0.9V Max.
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• ESD Protected Gate
• Ultra Low Profile Package
Mechanical Data
• Case: DFN1006H4-3
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating
94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ NiPdAu annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking: See Page 4
• Ordering & Date Code Information: See Page 4
• Weight: 0.001 grams
ESD protected
S
D
G
TOP VIEW
GH
SIDE VIEW
A
BC
D
N
L
BOTTOM VIEW
DFN1006H4-3
Dim Min Max Typ
A 0.95 1.075 1.00
B 0.55 0.675 0.60
C 0.45 0.55 0.50
D 0.20 0.30 0.25
G — 0.40 —
H
0 0.05 0.02
K 0.10 0.20 0.15
L 0.20 0.30 0.25
M — — 0.35
N — — 0.40
All Dimensions in mm
K
Drain
M
Gate
Body
Diode
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 1)
Total Power Dissipation (Note 1)
Continuous
Pulsed (Note 3)
Symbol
V_DSS
V_GSS
I_D
P_d
Value
20
±10
200
250
200
Thermal Resistance, Junction to Ambient
R_θJA
625
Operating and Storage Temperature Range
T_j, T_STG
-65 to +150
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
V
V
mA
mW
°C/W
°C
DS30799 Rev. 2 - 2
1 of 4
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DMN2005LP4K
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