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DMN2005K_15 Datasheet, PDF (1/5 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN2005K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Very Low Gate Threshold Voltage, 0.9V Max.
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• ESD Protected Gate
Mechanical Data
• Case: SOT23
• Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
• Ordering & Date Code Information: See Below
• Weight: 0.008 grams (approximate)
SOT23
ESD protected
TOP VIEW
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
D
G
S
TOP VIEW
Ordering Information (Note 4)
Notes:
Part Number
DMN2005K-7
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DM
DM = Product Type Marking Code
YM = Date Code Marking
Y = Year ex: T = 2006
M = Month ex: 9 = September
Date Code Key
Year
Code
2006
T
Month
Jan
Code
1
2007 2008 2009 2010
U
V
W
X
Feb
Mar
Apr
2
3
4
2011
Y
May
5
2012 2013 2014 2015
Z
A
B
C
Jun
Jul
Aug
6
7
8
2016
D
Sep
9
2017 2018 2019
E
F
G
Oct
Nov
O
N
2020
H
Dec
D
DMN2005K
Document number: DS30734 Rev. 8 - 2
1 of 5
www.diodes.com
June 2014
© Diodes Incorporated