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DMN2005K_0711 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | |||
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DMN2005K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
⢠Low On-Resistance
⢠Very Low Gate Threshold Voltage, 0.9V Max.
⢠Fast Switching Speed
⢠Low Input/Output Leakage
⢠Ultra-Small Surface Mount Package
⢠Lead Free By Design/RoHS Compliant (Note 2)
⢠"Green" Device (Note 4)
⢠ESD Protected Gate
ESD protected
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Mechanical Data
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SOT-23
Case: SOT-23
Case Material: Molded Plastic, âGreenâ Molding Compound.
UL Flammability Classification Rating94V-0
Moisture Sensitivity: Level 1 per J-STD-020C
Terminal Connections: See Diagram
Terminals: Finish ⯠Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 3
Ordering & Date Code Information: See Page 3
Weight: 0.008 grams (approximate)
Drain
D
Gate
Body
Diode
Gate
Protection
Diode
Source
Equivalent Circuit
G
S
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Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Symbol
Value
Unit
Drain-Source Voltage
VDSS
20
V
Gate-Source Voltage
VGSS
±10
V
Drain Current per element (Note 1)
Continuous
Pulsed (Note 3)
ID
300
600
mA
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
PD
RθJA
Tj, TSTG
Value
350
357
-65 to +150
Unit
mW
°C/W
°C
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transfer Admittance
Symbol Min
Typ Max Unit
Test Condition
BVDSS
20
IDSS
â¯
IGSS
â¯
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V VGS = 0V, ID = 100μA
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10
μA VDS = 17V, VGS = 0V
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±5
μA VGS = ±8V, VDS = 0V
VGS(th)
0.53
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0.9
V VDS = VGS, ID = 100μA
RDS (ON)
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3.5
1.7
Ω VGS = 1.8V, ID = 200mA
VGS = 2.7V, ID = 200mA
âYfsâ
40
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mS VDS = 3V, ID = 10A
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width â¤10μS, Duty Cycle â¤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
DMN2005K
Document number: DS30734 Rev. 5 - 2
1 of 4
www.diodes.com
November 2007
© Diodes Incorporated
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