DMN2005K Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODEL: DMN2005K
DMN2005K
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Low On-Resistance
• Very Low Gate Threshold Voltage, 0.9V Max.
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• "Green" Device (Note 4)
• ESD Protected Gate
Mechanical Data
• Case: SOT-23
• Case Material: Molded Plastic, “Green” Molding
Compound. UL Flammability Classification Rating
94V-0
• Moisture Sensitivity: Level 1 per J-STD-020C
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ Matte Tin annealed over Copper
leadframe. Solderable per MIL-STD-202, Method 208
• Marking: See Page 4
• Ordering & Date Code Information: See Page 4
• Weight: 0.008 grams (approximate)
A
BC
TOP VIEW
E
D
G
H
K
M
J
L
D
Drain
Gate
Gate
Protection
Diode
Body
Diode
Source
EQUIVALENT CIRCUIT
ESD protected
SOT-23
Dim Min Max
A
0.37 0.51
B
1.20 1.40
C
2.30 2.50
D
0.89 1.03
E
0.45 0.60
G
1.78 2.05
H
2.80 3.00
J
0.013 0.10
K 0.903 1.10
L
0.45 0.61
M 0.085 0.180
α
0°
8°
All Dimensions in mm
Maximum Ratings @T_A = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current per element (Note 1)
Total Power Dissipation (Note 1)
Continuous
Pulsed (Note 3)
Symbol
V_DSS
V_GSS
I_D
P_d
Value
20
±10
300
600
350
Thermal Resistance, Junction to Ambient
R_θJA
357
Operating and Storage Temperature Range
T_j, T_STG
-65 to +150
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Unit
V
V
mA
mW
°C/W
°C
DS30734 Rev. 3 - 2
1 of 4
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DMN2005K
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