DMN2005DLP4K_15 Datasheet, PDF (1/5 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Ultra Low Profile Package
• Low On-Resistance
• Very Low Gate Threshold Voltage, 0.9V Max.
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• ESD Protected Gate
• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
DMN2005DLP4K
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: X2-DFN1310-6
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish ⎯ NiPdAu annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e4
X2-DFN1310-6
D₁
G₂ S₂
ESD PROTECTED
S₁ G₁
D₂
Top View
Internal Schematic
Ordering Information (Note 4)
Notes:
Part Number
DMN2005DLP4K-7
Case
X2-DFN1310-6
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
DL
DL = Product Type Marking Code
DMN2005DLP4K
Document number: DS30801 Rev. 9 - 2
1 of 5
www.diodes.com
June 2012
© Diodes Incorporated