DMN2004WK_09 Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET

DMN2004WK
N-CHANNEL ENHANCEMENT MODE MOSFET
Features
• Low On-Resistance: R_DS(ON)
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected up to 2KV
• "Green" Device (Note 4)
• Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
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SOT-323
Case: SOT-323
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals: Finish − Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Terminal Connections: See Diagram
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.006 grams (approximate)
Drain
D
Gate
ESD protected up to 2kV
TOP VIEW
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Characteristic
Gate-Source Voltage
Drain Current (Note 1)
Steady
State
Pulsed Drain Current (Note 3)
T_A = 25°C
T_A = 85°C
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
Symbol
V_DSS
V_GSS
I_D
I_DM
G
S
TOP VIEW
Value
20
±8
540
390
1.5
Units
V
V
mA
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
200
625
-55 to +150
Units
mW
°C/W
°C
Electrical Characteristics @T_A = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Static Drain-Source On-Resistance
Symbol
Min
Typ
Max
Unit
BV_DSS
20
⎯
⎯
V
I_DSS
⎯
⎯
1
μA
I_GSS
⎯
⎯
±1
μA
V_GS(th)
0.5
⎯
1.0
V
0.4
0.55
R_{DS (ON)}
⎯
0.5
0.70
Ω
0.7
0.9
Forward Transfer Admittance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
|Y_fs|
200
⎯
⎯
ms
V_SD
0.5
⎯
1.4
V
C_iss
⎯
C_oss
⎯
C_rss
⎯
⎯
150
pF
⎯
25
pF
⎯
20
pF
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
5. Short duration pulse test used to minimize self-heating effect.
Test Condition
V_GS = 0V, I_D = 10μA
V_DS = 16V, V_GS = 0V
V_GS = ±4.5V, V_DS = 0V
V_DS = V_GS, I_D = 250μA
V_GS = 4.5V, I_D = 540mA
V_GS = 2.5V, I_D = 500mA
V_GS = 1.8V, I_D = 350mA
V_DS =10V, I_D = 0.2A
V_GS = 0V, I_S = 115mA
V_DS = 16V, V_GS = 0V
f = 1.0MHz
DMN2004WK
Document number: DS30934 Rev. 4 - 2
1 of 4
www.diodes.com
January 2009
© Diodes Incorporated