DMN2004WK Datasheet, PDF (1/4 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

SPICE MODEL: DMN2004WK
Lead-free Green
DMN2004WK
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR
Features
· Low On-Resistance: RDS(ON)
· Low Gate Threshold Voltage
A
· Low Input Capacitance
D
· Fast Switching Speed
BC
· Low Input/Output Leakage
· Lead Free By Design/RoHS Compliant (Note 2)
G
S
· ESD Protected up to 2KV
G
· "Green" Device (Note 4)
H
· Qualified to AEC-Q101 standards for High Reliability
K
M
Mechanical Data
J
DE
· Case: SOT-323
· Case Material: Molded Plastic, “Green” Molding
Drain
Compound. UL Flammability Classification Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020C
· Terminals: Finish ¾ Matte Tin annealed over Alloy 42
leadframe. Solderable per MIL-STD-202, Method 208 _Gate
· Terminal Connections: See Diagram
· Marking: See Last Page
· Ordering & Date Code Information: See Last Page
· Weight: 0.006 grams (approximate)
Gate
Protection
Diode
Source
EQUIVALENT CIRCUIT
L
ESD protected up to 2KV
SOT-323
Dim Min Max
A
0.25 0.40
B
1.15 1.35
C
2.00 2.20
D
0.65 Nominal
E
0.30 0.40
G
1.20 1.40
H
1.80 2.20
J
0.0 0.10
K
0.90 1.00
L
0.25 0.40
M
0.10 0.18
a
0°
8°
All Dimensions in mm
Maximum Ratings ^{@ TA = 25°C unless otherwise specified}
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Steady
State
Pulsed Drain Current (Note 3)
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
T_A = 25°C
T_A = 85°C
Symbol
VDSS
VGSS
I_D
I_DM
P_d
R_qJA
Tj, TSTG
Value
20
±8
540
390
1.5
200
625
-65 to +150
Note:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width £10mS, Duty Cycle £1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
V
V
mA
A
mW
°C/W
°C
DS30934 Rev. 2 - 2
1 of 4
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DMN2004WK
ã Diodes Incorporated