DMN2004VK_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 1)
• ESD Protected Gate up to 2kV
• "Green" Device (Note 2)
• Qualified to AEC-Q101 Standards for High Reliability
DMN2004VK
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Mechanical Data
• Case: SOT563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Weight: 0.006 grams (approximate)
SOT563
D₂
G₁
S₁
ESD protected up to 2kV
Top View
Bottom View
S₂
G₂
D₁
Top View
Internal Schematic
Ordering Information (Note 3)
Notes:
Part Number
DMN2004VK-7
DMN2004VK-13
Case
SOT563
SOT563
Packaging
3000/Tape & Reel
10000/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free
2. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
NAB YM
NAB = Marking Code
YM = Date Code Marking
Y = Year (ex: T = 2006)
M = Month (ex: 9 = September)
Date Code Key
Year
2006
Code
T
Month
Jan
Code
1
2007
U
Feb
2
2008
V
Mar
3
2009
W
Apr
4
2010
X
May
5
2011
Y
Jun
6
2012
Z
Jul
7
2013
A
Aug
8
2014
B
Sep
9
2015
C
Oct
O
2016
D
Nov
N
2017
E
Dec
D
DMN2004VK
Document number: DS30865 Rev. 5 - 2
1 of 6
www.diodes.com
March 2012
© Diodes Incorporated