DMN2004VK_10 Datasheet, PDF (1/6 Pages) Diodes Incorporated – DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN2004VK
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
• Dual N-Channel MOSFET
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Ultra-Small Surface Mount Package
• Lead Free By Design/RoHS Compliant (Note 2)
• ESD Protected Gate up to 2kV
• "Green" Device (Note 4)
• Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
• Case: SOT-563
• Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
• Moisture Sensitivity: Level 1 per J-STD-020
• Terminal Connections: See Diagram
• Terminals: Finish - Matte Tin annealed over Copper lead frame.
Solderable per MIL-STD-202, Method 208
• Marking Information: See Page 4
• Ordering Information: See Page 4
• Weight: 0.006 grams (approximate)
SOT-563
D₂
G₁
S₁
ESD protected up to 2kV
TOP VIEW
BOTTOM VIEW
S₂
G₂
D₁
TOP VIEW
Internal Schematic
Maximum Ratings @T_A = 25°C unless otherwise specified
Drain-Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 3)
Characteristic
Steady
State
T_A = 25°C
T_A = 85°C
Symbol
V_DSS
V_GSS
I_D
I_DM
Value
20
±8
540
390
1.5
Units
V
V
mA
A
Thermal Characteristics @T_A = 25°C unless otherwise specified
Characteristic
Total Power Dissipation (Note 1)
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Symbol
P_D
R_θJA
T_J, T_STG
Value
250
500
-65 to +150
Notes:
1. Device mounted on FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Units
mW
°C/W
°C
DMN2004VK
Document number: DS30865 Rev. 4 - 2
1 of 6
www.diodes.com
July 2010
© Diodes Incorporated