 English |
|
|
|
|
|
|
|
| DMN2004K_15 Datasheet, PDF (1/6 Pages) Diodes Incorporated – N-CHANNEL ENHANCEMENT MODE MOSFET | |||
| |||
|
DMN2004K
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS
20V
RDS(ON)
0.55⦠@ VGS = 4.5V
0.9⦠@ VGS = 1.8V
ID
TA = +25°C
630mA
410mA
Description
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON)) and yet maintain superior switching
performance, making it ideal for high efficiency power management
applications.
Applications
ï· DC-DC Converters
ï· Power Management Functions
SOT23
Features and Benefits
ï· Low On-Resistance: RDS(ON) = 550(max)m⦠@ VGS = 4.5V
ï· Low Gate Threshold Voltage
ï· Low Input Capacitance
ï· Fast Switching Speed
ï· Low Input/Output Leakage
ï· ESD Protected up to 2KV
ï· Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
ï· Halogen and Antimony Free. âGreenâ Device (Note 3)
ï· Qualified to AEC-Q101 standards for High Reliability
Mechanical Data
ï· Case: SOT23
ï· Case Material: Molded Plastic, âGreenâ Molding Compound. UL
Flammability Classification Rating 94V-0
ï· Moisture Sensitivity: Level 1 per J-STD-020
ï· Terminals: Finish ï¾ Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208 e3
ï· Terminal Connections: See Diagram
ï· Weight: 0.008 grams (approximate)
Drain
D
ESD PROTECTED TO 2kV
Top View
Gate
Gate
Protection
Diode
Source
Equivalent Circuit
G
S
Top View
Ordering Information (Note 4)
Notes:
Part Number
DMN2004K-7
Case
SOT23
Packaging
3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporatedâs definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Greenâ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
NAB
NAB
Chengdu A/T Site
Shanghai A/T Site
NAB = Product Type Marking Code
YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)
YM = Date Code Marking for CAT (Chengdu Assembly/ Test site)
Y or Y = Year (ex: A = 2013)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2008
V
Jan
1
2009
W
Feb
Mar
2
3
DMN2004K
Document number: DS30938 Rev. 9 - 2
2010
X
Apr
4
2011
Y
May
Jun
5
6
2012
Z
2013
A
Jul
Aug
Sep
7
8
9
1 of 6
www.diodes.com
2014
B
2015
C
Oct
Nov
Dec
O
N
D
July 2013
© Diodes Incorporated
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese